SI2307CDS-T

SI2307CDS-T1-GE3 vs SI2307CDS-T1-E3 vs SI2307CDS-T1

 
PartNumberSI2307CDS-T1-GE3SI2307CDS-T1-E3SI2307CDS-T1
DescriptionMOSFET -30V Vds 20V Vgs SOT-23MOSFET -30V Vds 20V Vgs SOT-23
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current3.5 A3.5 A-
Rds On Drain Source Resistance88 mOhms88 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge4.1 nC4.1 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.8 W1.8 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.45 mm--
Length2.9 mm--
SeriesSI2SI2-
Transistor Type1 P-Channel1 P-Channel-
Width1.6 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min7 S7 S-
Fall Time7.7 ns7.7 ns-
Product TypeMOSFETMOSFET-
Rise Time13 ns13 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time17 ns17 ns-
Typical Turn On Delay Time5.5 ns5.5 ns-
Part # AliasesSI2307CDS-GE3SI2307CDS-E3-
Unit Weight0.000282 oz0.000282 oz-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2307CDS-T1-GE3 MOSFET -30V Vds 20V Vgs SOT-23
SI2307CDS-T1-E3 MOSFET -30V Vds 20V Vgs SOT-23
SI2307CDS-T1 Nuevo y original
SI2307CDS-T1-GE3-CUT TAPE Nuevo y original
Vishay
Vishay
SI2307CDS-T1-E3 MOSFET P-CH 30V 3.5A SOT23-3
SI2307CDS-T1-GE3 MOSFET P-CH 30V 3.5A SOT23-3
Top