 | | |
| PartNumber | SI2304BDS-T1-GE3 | SI2304BDS-T1-E3 |
| Description | MOSFET 30V 3.2A 1.08W 70mohm @ 10V | MOSFET 30V 3.2A 0.07Ohm |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 2.6 A | 2.6 A |
| Rds On Drain Source Resistance | 70 mOhms | 70 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 10 V | 10 V |
| Qg Gate Charge | 2.6 nC | 2.6 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 0.75 W | 0.75 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.45 mm | 1.45 mm |
| Length | 2.9 mm | 2.9 mm |
| Series | SI2 | SI2 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 1.6 mm | 1.6 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 6 S | 6 S |
| Fall Time | 15 ns | 15 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 12.5 ns | 12.5 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 19 ns |
| Typical Turn On Delay Time | 7.5 ns | 7.5 ns |
| Part # Aliases | SI2304BDS-GE3 | SI2304BDS-E3 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2304BDS-T1-GE3 | MOSFET 30V 3.2A 1.08W 70mohm @ 10V | |
| SI2304BDS-T1-E3 | MOSFET 30V 3.2A 0.07Ohm | ||
Vishay |
SI2304BDS-T1-E3 | MOSFET N-CH 30V 2.6A SOT23-3 | |
| SI2304BDS-T1-GE3 | MOSFET N-CH 30V 2.6A SOT23-3 | ||
| SI2304BDS-T1-E3-CUT TAPE | Nuevo y original | ||
| SI2304BDS-T1-GE3-CUT TAPE | Nuevo y original |