SI2304BDS-T1-GE3

Mfr. #:: SI2304BDS-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET N-CH 30V 2.6A SOT23-3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI2304BDS-T1-GE3 Ficha de datos
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Más información:: SI2304BDS-T1-GE3 más información

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Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI2304BDS-GE3

Unidad de peso: 0.050717 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: TO-236-3, SC-59, SOT-23-3

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: SOT-23-3 (TO-236)

Configuración: Único

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 750mW

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 30V

Entrada-Capacitancia-Ciss-Vds: 225pF @ 15V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 2.6A (Ta)

Rds-On-Max-Id-Vgs: 70 mOhm @ 2.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Puerta-Carga-Qg-Vgs: 4nC @ 5V

Disipación de potencia Pd: 750 mW

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 12.5 ns

Hora de levantarse: 12.5 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 2.6 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Resistencia a la fuente de desagüe de Rds: 70 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 19 ns

Tiempo de retardo de encendido típico: 7.5 ns

Modo de canal: Mejora

Tags: SI2304BDS-T1, SI2304BDS-T, SI2304B, SI2304, SI230, SI23, SI2

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2304BDS-T1-GE3 Más información

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI2304BDS-T1-GE3 DISTI # V72:2272_07432760	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	2710	1000:$0.1771 500:$0.2022 250:$0.2274 100:$0.2344 25:$0.3154 10:$0.3166 1:$0.3799
SI2304BDS-T1-GE3 DISTI # SI2304BDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 2.6A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	105553In Stock	1000:$0.1246 500:$0.1661 100:$0.2423 10:$0.3530 1:$0.4500
SI2304BDS-T1-GE3 DISTI # SI2304BDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 2.6A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	105553In Stock	1000:$0.1246 500:$0.1661 100:$0.2423 10:$0.3530 1:$0.4500
SI2304BDS-T1-GE3 DISTI # SI2304BDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 2.6A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	105000In Stock	3000:$0.1109
SI2304BDS-T1-GE3 DISTI # 27168410	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	2710	1000:$0.1771 500:$0.2022 250:$0.2274 100:$0.2344 33:$0.3154
SI2304BDS-T1-GE3 DISTI # SI2304BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2304BDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2029 6000:$0.1969 12000:$0.1889 18000:$0.1839 30000:$0.1789
SI2304BDS-T1-GE3 DISTI # SI2304BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R (Alt: SI2304BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2749 6000:€0.1869 12000:€0.1609 18000:€0.1489 30000:€0.1379
SI2304BDS-T1-GE3 DISTI # 16P3704	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 16P3704) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8040 25:$0.6070 50:$0.5290 100:$0.4510 250:$0.4120 500:$0.3710 1000:$0.2870
SI2304BDS-T1-GE3 DISTI # 16P3704	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 3.2A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):105mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	3560	1:$0.8040 25:$0.6070 50:$0.5290 100:$0.4510 250:$0.4120 500:$0.3710 1000:$0.2870
SI2304BDS-T1-GE3. DISTI # 28AC2124	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.2030 6000:$0.1970 12000:$0.1890 18000:$0.1840 30000:$0.1790
SI2304BDS-T1-GE3 DISTI # 781-SI2304BDS-T1-GE3	Vishay Intertechnologies	MOSFET 30V 3.2A 1.08W 70mohm @ 10V RoHS: Compliant	11724	1:$0.6700 10:$0.5060 100:$0.3760 500:$0.3090 1000:$0.2390 3000:$0.2170 6000:$0.2030 9000:$0.1900
SI2304BDS-T1-GE3 DISTI # C1S803603512729	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	6000	3000:$0.0900
SI2304BDS-T1-GE3 DISTI # C1S803601360168	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	2710	250:$0.2341 100:$0.2345 25:$0.3157 10:$0.3168
SI2304BDS-T1-GE3	Vishay Intertechnologies	MOSFET 30V 3.2A 1.08W 70mohm @ 10V RoHS: Compliant	Americas -
SI2304BDS-T1-GE3 DISTI # XSFP00000077602	Vishay Siliconix	RoHS: Compliant	4038	3000:$0.1936 4038:$0.1760

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI2304BDS-T1-GE3 OMO.#: OMO-SI2304BDS-T1-GE3	MOSFET 30V 3.2A 1.08W 70mohm @ 10V
	Mfr.#: SI2304BDS-T1-E3 OMO.#: OMO-SI2304BDS-T1-E3	MOSFET 30V 3.2A 0.07Ohm
	Mfr.#: SI2304BDS OMO.#: OMO-SI2304BDS-1190	Nuevo y original
	Mfr.#: SI2304BDS-T1-E3 OMO.#: OMO-SI2304BDS-T1-E3-VISHAY	MOSFET N-CH 30V 2.6A SOT23-3
	Mfr.#: SI2304BDS-T1-GE3 OMO.#: OMO-SI2304BDS-T1-GE3-VISHAY	MOSFET N-CH 30V 2.6A SOT23-3
	Mfr.#: SI2304BDS-TI-E3 OMO.#: OMO-SI2304BDS-TI-E3-1190	Nuevo y original
	Mfr.#: SI2304BDS-T1-E3-CUT TAPE OMO.#: OMO-SI2304BDS-T1-E3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SI2304BDS-T1-GE3-CUT TAPE OMO.#: OMO-SI2304BDS-T1-GE3-CUT-TAPE-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 5500
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El precio actual de SI2304BDS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,13 US$~~; ~~0,13 US$~~

10: ~~0,12 US$~~; ~~1,22 US$~~

100: ~~0,12 US$~~; ~~11,55 US$~~

500: ~~0,11 US$~~; ~~54,55 US$~~

1000: ~~0,10 US$~~; ~~102,60 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SI2304BDS-T1 4
SI2304BDS-T 5
SI2304B 6
SI2304 26
SI230 331
SI23 561
SI2 1125

SI2304BDS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes