 | | | |
| PartNumber | SI1922EDH-T1-GE3 | SI1913EDH-T1-E3 | SI1913DH-T1-E3 |
| Description | MOSFET 20V Vds 8V Vgs SC70-6 | MOSFET RECOMMENDED ALT 781-SI1967DH-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI1967DH-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.3 A | - | - |
| Rds On Drain Source Resistance | 198 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 2.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.25 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1 mm | - | - |
| Length | 2.1 mm | - | - |
| Series | SI1 | SI1 | SI1 |
| Transistor Type | 2 N-Channel | - | - |
| Width | 1.25 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 4 S | - | - |
| Fall Time | 220 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 80 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 480 ns | - | - |
| Typical Turn On Delay Time | 43 ns | - | - |
| Part # Aliases | SI1988DH-T1-GE3 | SI1913EDH-E3 | SI1913DH-E3 |
| Unit Weight | 0.000265 oz | 0.000265 oz | 0.000265 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1926DL-T1-GE3 | MOSFET 60V Vds 20V Vgs SC70-6 | |
| SI1922EDH-T1-GE3 | MOSFET 20V Vds 8V Vgs SC70-6 | ||
| SI1926DL-T1-E3 | MOSFET 60V Vds 20V Vgs SC70-6 | ||
| SI1913EDH-T1-E3 | MOSFET RECOMMENDED ALT 781-SI1967DH-T1-GE3 | ||
| SI1913DH-T1-E3 | MOSFET RECOMMENDED ALT 781-SI1967DH-T1-GE3 | ||
| SI1907DL-T1-E3 | MOSFET DUAL P-CH 1.8V (G-S) TRENCH | ||
| SI1910DL-T1-E3 | Nuevo y original | ||
| SI1911DY | Nuevo y original | ||
| SI1912EDH | Nuevo y original | ||
| SI1912EDH-T1 | MOSFET RECOMMENDED ALT 78-SI1922EDH-T1-GE3 | ||
| SI1912EDH-T1-GE3 | 1130MA, 20V, 2 CHANNEL, N-CHANNEL, SI, SMALL SIGNAL, MOSFET | ||
| SI1912EDH-TI-E3 | Nuevo y original | ||
| SI19132CB | Nuevo y original | ||
| SI19132CBU | Nuevo y original | ||
| SI19134 CTU | Nuevo y original | ||
| SI1913DH-T1-GE3 | Nuevo y original | ||
| SI1913EDH-T1-GE3 | Nuevo y original | ||
| SI19151CLU | Nuevo y original | ||
| SI1916 | Nuevo y original | ||
| SI1917EDH | Nuevo y original | ||
| SI1917EDH-T1 | MOSFET RECOMMENDED ALT 781-SI1965DH-T1-GE3 | ||
| SI1917EDH-T1-E3 (PB) | Nuevo y original | ||
| SI1917EDHT1GE3 | Small Signal Field-Effect Transistor, 1A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI1917ESH-T1 | Nuevo y original | ||
| SI19181CNU | Nuevo y original | ||
| SI19185ACTU | Nuevo y original | ||
| SI19190CTG64 | Nuevo y original | ||
| SI1922EDH | Nuevo y original | ||
| SI1922EDH-T | Nuevo y original | ||
| SI1922EDH-T1-E3 | Nuevo y original | ||
| SI1926DY | Nuevo y original | ||
| SI19287BCNU | Nuevo y original | ||
| SI19422DY-T1 | Nuevo y original | ||
| SI19440DY | Nuevo y original | ||
| SI19533CN9L | Nuevo y original | ||
| SI19587CNUC | Nuevo y original | ||
| SI1922EDH-T1-GE3-CUT TAPE | Nuevo y original | ||
| SI1912 | Nuevo y original | ||
| SI1913 | Nuevo y original | ||
| SI19134CTU | Nuevo y original | ||
| SI1913EDH-T1 | MOSFET RECOMMENDED ALT 781-SI1967DH-T1-GE3 | ||
| SI1917EDH-T1-GE3 | Nuevo y original | ||
| SI19190CT64 | Nuevo y original | ||
Vishay |
SI1912EDH-T1-E3 | MOSFET 2N-CH 20V 1.13A SC70-6 | |
| SI1913DH-T1-E3 | MOSFET 2P-CH 20V 0.88A SC70-6 | ||
| SI1917EDH-T1-E3 | MOSFET 2P-CH 12V 1A SC70-6 | ||
| SI1922EDH-T1-GE3 | MOSFET 2N-CH 20V 1.3A SOT-363 | ||
| SI1926DL-T1-E3 | MOSFET 2N-CH 60V 0.37A SC-70-6 | ||
| SI1926DL-T1-GE3 | MOSFET 2N-CH 60V 0.37A SOT363 | ||
| SI1913EDH-T1-E3 | IGBT Transistors MOSFET 20V 1.0A |