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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI1965DH-T1-GE3 DISTI # 781-SI1965DH-T1-GE3 | Vishay Intertechnologies | MOSFET -12V Vds 8V Vgs SC70-6 RoHS: Compliant | 996 |
|
| SI1917EDHT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 1A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 | |
| SI1965DH-T1-GE3 | Vishay Intertechnologies | MOSFET -12V Vds 8V Vgs SC70-6 RoHS: Compliant | Americas - 3000 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SI1917EDH OMO.#: OMO-SI1917EDH-1190 |
Nuevo y original |
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Mfr.#: SI1917EDH-T1 OMO.#: OMO-SI1917EDH-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI1965DH-T1-GE3 |
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Mfr.#: SI1917EDH-T1-E3 OMO.#: OMO-SI1917EDH-T1-E3-VISHAY |
MOSFET 2P-CH 12V 1A SC70-6 |
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Mfr.#: SI1917EDH-T1-E3 (PB) OMO.#: OMO-SI1917EDH-T1-E3-PB--1190 |
Nuevo y original |
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Mfr.#: SI1917EDH-T1-GE3 OMO.#: OMO-SI1917EDH-T1-GE3-1190 |
Nuevo y original |
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Mfr.#: SI1917EDHT1GE3 OMO.#: OMO-SI1917EDHT1GE3-1190 |
Small Signal Field-Effect Transistor, 1A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |