SGL160N60UFDTU

SGL160N60UFDTU vs SGL160N60UFDTU(SG) vs SGL160N60UFDTU--

 
PartNumberSGL160N60UFDTUSGL160N60UFDTU(SG)SGL160N60UFDTU--
DescriptionIGBT Transistors Dis High Perf IGBT
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-264-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C160 A--
Pd Power Dissipation250 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSGL160N60UFD--
PackagingTube--
Continuous Collector Current Ic Max160 A--
Height26 mm--
Length20 mm--
Width5 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current80 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity375--
SubcategoryIGBTs--
Part # AliasesSGL160N60UFDTU_NL--
Unit Weight0.238311 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SGL160N60UFDTU IGBT Transistors Dis High Perf IGBT
SGL160N60UFDTU(SG) Nuevo y original
SGL160N60UFDTU-- Nuevo y original
ON Semiconductor
ON Semiconductor
SGL160N60UFDTU IGBT Transistors Dis High Perf IGBT
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