 |  | | |
| PartNumber | SGL160N60UFDTU | SGL160N60UFDT | SGL160N60UFDTU(SG) |
| Description | IGBT Transistors Dis High Perf IGBT | ||
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | IGBT Transistors | IGBTs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-264-3 | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.1 V | 2.1 V | - |
| Maximum Gate Emitter Voltage | 20 V | +/- 20 V | - |
| Continuous Collector Current at 25 C | 160 A | 160 A | - |
| Pd Power Dissipation | 250 W | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | SGL160N60UFD | - | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 160 A | 160 A | - |
| Height | 26 mm | - | - |
| Length | 20 mm | - | - |
| Width | 5 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 80 A | - | - |
| Gate Emitter Leakage Current | +/- 100 nA | +/- 100 nA | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 375 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | SGL160N60UFDTU_NL | - | - |
| Unit Weight | 0.238311 oz | 0.238311 oz | - |
| Part Aliases | - | SGL160N60UFDTU_NL | - |
| Package Case | - | TO-264-3, TO-264AA | - |
| Input Type | - | Standard | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-264 | - |
| Power Max | - | 250W | - |
| Reverse Recovery Time trr | - | 95ns | - |
| Current Collector Ic Max | - | 160A | - |
| Voltage Collector Emitter Breakdown Max | - | 600V | - |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | 300A | - |
| Vce on Max Vge Ic | - | 2.6V @ 15V, 80A | - |
| Switching Energy | - | 2.5mJ (on), 1.76mJ (off) | - |
| Gate Charge | - | 345nC | - |
| Td on off 25°C | - | 40ns/90ns | - |
| Test Condition | - | 300V, 80A, 3.9 Ohm, 15V | - |
| Pd Power Dissipation | - | 250 W | - |
| Collector Emitter Voltage VCEO Max | - | 600 V | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
SGL160N60UFDTU | IGBT Transistors Dis High Perf IGBT | |
| SGL160N60UFDT | Nuevo y original | ||
| SGL160N60UFDTU(SG) | Nuevo y original | ||
| SGL160N60UFDTU-- | Nuevo y original | ||
ON Semiconductor |
SGL160N60UFDTU | IGBT Transistors Dis High Perf IGBT |