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SEMIX1

SEMIX101GD066HDS vs SEMIX101GD126HDS vs SEMIX101GD128DC

 
PartNumberSEMIX101GD066HDSSEMIX101GD126HDSSEMIX101GD128DC
DescriptionIGBT MODULE, SIX, 1.2KV, 129A, Transistor Polarity:Six NPN, DC Collector Current:129A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
Fabricante Parte # Descripción RFQ
SEMIX101GD066HDS Nuevo y original
SEMIX101GD126HDS IGBT MODULE, SIX, 1.2KV, 129A, Transistor Polarity:Six NPN, DC Collector Current:129A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
SEMIX101GD128DC Nuevo y original
SEMIX101GD128DS Nuevo y original
SEMIX101GD12E4S Nuevo y original
SEMIX101GD12T4S Nuevo y original
SEMIX151GB12E4V4 Nuevo y original
SEMIX151GB12T4S Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel
SEMIX151GD126HDS SEMIX, Trench IGBT Module, 1200V, 100A
SEMIX151GD128DS Nuevo y original
SEMIX151GD12E4S IGBT MODULE, SIX, 1.2KV, 232A, Transistor Polarity:Six NPN, DC Collector Current:232A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
SEMIX171KH16S RECTIFIER/THYRISTOR DIODE MODULE, 1600V, SEMIX
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