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SEMIX202GB066HDS

SEMIX202GB066HDS
Mfr. #:
SEMIX202GB066HDS
Fabricante:
SEMIKRON
Descripción:
IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SEMIX202GB066HDS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
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T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SEMIX202, SEMIX20, SEMIX2, SEMIX, SEMI, SEM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IGBT Module; NPT; Trench; 600V; SEMIX 2
***ikron
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications: Matrix Converter Resonant Inverter Current Source Inverter
***ark
IGBT MODULE, DUAL, 600V, 275A; Continuous Collector Current:275A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:45W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V RoHS Compliant: Yes
***ment14 APAC
IGBT MODULE, 2X600V; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:274A; Collector Emitter Voltage Vces:1.9V; Collector Emitter Voltage V(br)ceo:1V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:SEMiX 2s; No. of Pins:16; SVHC:No SVHC (20-Jun-2011); Av Current Ic:275A; Current Ic Continuous a Max:275A; Forward Surge Current Ifsm Max:1000A; Package / Case:SEMiX 2s; Pulsed Current Icm:400A; Repetitive Reverse Voltage Vrrm Max:600V; Rise Time:80ns; Termination Type:Screw; Voltage Vces:600V
***ical
Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray
***ark
Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes
***ineon
EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon
***et Europe
EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3
***ment14 APAC
IGBT, LOW POWER, 600V, 50A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:205W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:205W
***ineon
EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; majorhomeapplicances
***ure Electronics
BSM200GB60 Series 600 V 230 A 730 W Chassis Mount IGBT Module
***trelec
IGBT module Connection: 3 x M5 Fastening: 2 x M6 Configuration: Half-Bridge Housing type: 34 mm Collector-emitter saturation voltage: 2.45 V Collector-emitter voltage: 600 V Energy dissipation during make-time: 4.6 mJ Energy dissipation during turn-off time: 6.3 mJ
***ineon
Our well-known 34 mm 600V dual IGBT modules are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; ups
***et
Motor / Motion / Ignition Controllers & Drivers 600V/50A
***inecomponents.com
600V, 50A IGBT Module (Molding Type)
***el Electronic
IC REG CONV DDR BUS 1OUT 8MSOP
***omponent
Fairchild Semiconductor power module
***nell
IGBT MODULE, 600V, 50A; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:600V; Current, Ic Continuous a Max:50A; Voltage, Vce Sat Max:2.8V; Power Dissipation:250W; Case Style:7PM-GA; Termination Type:Screw; Centres, Fixing:80mm; Current, Icm Pulsed:100A; Depth, External:93mm; Diameter, Fixing Hole:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:250W; Time, Rise:30ns; Transistors, No. of:2; Voltage, Vceo:600V
***et
Trans IGBT Module N-CH 600V 100A 7-Pin EPM Rail
***el Electronic
IGBT MODULE 600V 100A 400W EPM7
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Igbt Array & Module Transistor, N Channel, 75 A, 2.8 V, 310 W, 600 V, 7Pm-Ga
***Yang
IGBT Module Half Bridge 600V 75A 310W Chassis Mount 7PM-GA - Bulk
***inecomponents.com
600V, 75A IGBT Module (Molding Type)
***el Electronic
IGBT MODULE 600V 75A 310W 7PMGA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
IGBT MODULE, 600V, 75A; Transistor Type:IGBT Module; Transistor Polarity:NPN; Voltage, Vces:600V; Current Ic Continuous a Max:75A; Voltage, Vce Sat Max:2.8V; Power Dissipation:310W; Case Style:7PM-GA; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:150A; External Depth:93mm; Fixing Centres:80mm; Fixing Hole Diameter:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:310W; Time, Rise:40ns; Transistors, No. of:2
Parte # Mfg. Descripción Valores Precio
SEMIX202GB066HDS
DISTI # 01P3986		SEMIKRONIGBT MODULE, DUAL, 600V, 275A,Transistor Polarity:Dual NPN,DC Collector Current:275A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:45W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:- RoHS Compliant: Yes0
  • 100:$65.8200
  • 50:$70.0300
  • 25:$71.0800
  • 10:$72.1300
  • 5:$74.2400
  • 1:$76.3500
SEMIX202GB066HDS
DISTI # 70098306		SEMIKRONIGBT Module,NPT,Trench,600V,SEMIX 2
RoHS: Compliant		0
  • 1:$106.5000
  • 6:$100.7800
  • 30:$95.6900
  • 96:$91.0600
  • 144:$86.8700
SEMIX202GB066HDS
DISTI # 1300546		SEMIKRON 
RoHS: Compliant		0
  • 2500:$110.5800
  • 1000:$114.2000
  • 250:$120.1100
  • 500:$120.1100
  • 100:$122.2100
  • 25:$126.6600
  • 10:$129.0000
  • 1:$133.9600
Imagen Parte # Descripción
SEMIX202GB066HD

Mfr.#: SEMIX202GB066HD

OMO.#: OMO-SEMIX202GB066HD-1190

 Nuevo y original
SEMIX202GB066HDS

Mfr.#: SEMIX202GB066HDS

OMO.#: OMO-SEMIX202GB066HDS-1190

 IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
SEMIX202GB128D

Mfr.#: SEMIX202GB128D

OMO.#: OMO-SEMIX202GB128D-1190

 Nuevo y original
SEMIX202GB128DS

Mfr.#: SEMIX202GB128DS

OMO.#: OMO-SEMIX202GB128DS-1190

 Nuevo y original
SEMIX202GB12E4S

Mfr.#: SEMIX202GB12E4S

OMO.#: OMO-SEMIX202GB12E4S-1190

 Nuevo y original
SEMIX202GB12T4S

Mfr.#: SEMIX202GB12T4S

OMO.#: OMO-SEMIX202GB12T4S-1190

 Nuevo y original
SEMIX202GB12V4S

Mfr.#: SEMIX202GB12V4S

OMO.#: OMO-SEMIX202GB12V4S-1190

 Nuevo y original
SEMIX202GB12VS

Mfr.#: SEMIX202GB12VS

OMO.#: OMO-SEMIX202GB12VS-1190

 IGBT, MODULE, 1.2KV, 310A, Transistor Polarity:Dual NPN, DC Collector Current:310A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:
Disponibilidad
Valores:
Available
En orden:
5500
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El precio actual de SEMIX202GB066HDS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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