PartNumber | SD56120 | SD56120M | SD56120C |
Description | RF MOSFET Transistors N-Ch 65 Volt 14 Amp | RF MOSFET Transistors N-Ch 65 Volt 14 Amp | RF MOSFET Transistors RF Power LDMOS Transisto |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
RoHS | Y | Y | - |
Transistor Polarity | N-Channel | N-Channel | - |
Technology | Si | Si | - |
Id Continuous Drain Current | 14 A | 14 A | - |
Vds Drain Source Breakdown Voltage | 65 V | 65 V | - |
Gain | 14 dB | 13 dB | - |
Output Power | 100 W | 120 W | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | M246 | M252 | - |
Packaging | Tube | Tube | - |
Configuration | Dual | Dual | - |
Height | 5.08 mm | 5.33 mm | - |
Length | 29.08 mm | 22.05 mm | - |
Operating Frequency | 1 GHz | 1 GHz | - |
Series | SD56120 | SD56120 | - |
Type | RF Power MOSFET | RF Power MOSFET | - |
Width | 5.97 mm | 9.91 mm | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Forward Transconductance Min | 3 S | 3 S | - |
Channel Mode | Enhancement | Enhancement | - |
Pd Power Dissipation | 217 W | 236 W | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
Factory Pack Quantity | 60 | 60 | - |
Subcategory | MOSFETs | MOSFETs | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |