SCTW

SCTW90N65G2V vs SCTWA10N120 vs SCTWA20N120

 
PartNumberSCTW90N65G2VSCTWA10N120SCTWA20N120
DescriptionMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 packageMOSFETMOSFET
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSY--
TechnologySiC--
Mounting StyleThrough Hole--
Package / CaseHIP247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance25 mOhms--
Vgs th Gate Source Threshold Voltage1.9 V--
Vgs Gate Source Voltage10 V to 22 V--
Qg Gate Charge157 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 200 C--
Pd Power Dissipation390 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
SeriesSCTW90NSCTWA10N120SCTWA20N120
Transistor Type1 N-Channel--
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time16 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time38 ns--
Factory Pack Quantity600600600
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time58 ns--
Typical Turn On Delay Time26 ns--
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
SCTWA50N120 MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
SCTW90N65G2V MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
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SCTWA20N120 MOSFET
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SCTWA20N120 IC POWER MOSFET 1200V HIP247
SCTWA30N120 IC POWER MOSFET 1200V HIP247
SCTWA50N120 MOSFET N-CH 1200V 65A HIP247
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SCTWV Nuevo y original
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