PartNumber | SCTW90N65G2V | SCTWA10N120 | SCTWA20N120 |
Description | MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package | MOSFET | MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | SiC | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | HIP247-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 90 A | - | - |
Rds On Drain Source Resistance | 25 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.9 V | - | - |
Vgs Gate Source Voltage | 10 V to 22 V | - | - |
Qg Gate Charge | 157 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
Pd Power Dissipation | 390 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Series | SCTW90N | SCTWA10N120 | SCTWA20N120 |
Transistor Type | 1 N-Channel | - | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 16 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 38 ns | - | - |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 58 ns | - | - |
Typical Turn On Delay Time | 26 ns | - | - |