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SCTWA50N120

SCTWA50N120
Mfr. #:
SCTWA50N120
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-CH 1200V 65A HIP247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SCTWA50N120 Ficha de datos
Entrega:
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ECAD Model:
Más información:
SCTWA50N120 más información SCTWA50N120 Product Details
Atributo del producto
Valor de atributo
Tags
SCTWA, SCTW, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCTWA50N120 Series 1200 V 65 A Silicon carbide Power MOSFET - HiP-247 (TO-247-3)
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
***ical
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
***icroelectronics SCT
SiC MOSFETs, 1200V ,65A, 69mΩ, HIP247 long leads
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
Parte # Mfg. Descripción Valores Precio
SCTWA50N120
DISTI # 33792122		STMicroelectronicsSilicon Carbide Power MOSFET600
  • 1:$25.0832
SCTWA50N120
DISTI # 497-18637-ND		STMicroelectronicsMOSFET N-CH 1200V 65A HIP247
RoHS: Compliant
Min Qty: 1
Container: Tube		600In Stock
  • 100:$27.8160
  • 10:$32.5740
  • 1:$35.3200
SCTWA50N120
DISTI # V99:2348_17697480		STMicroelectronicsSilicon Carbide Power MOSFET0
    SCTWA50N120
    DISTI # V36:1790_17051738    		STMicroelectronicsSilicon Carbide Power MOSFET0
    • 600000:$22.1800
    • 300000:$22.1900
    • 60000:$24.1700
    • 6000:$28.9200
    • 600:$29.7900
    SCTWA50N120
    DISTI # SCTWA50N120    		STMicroelectronicsTrans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube (Alt: SCTWA50N120)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Asia - 0
      SCTWA50N120
      DISTI # SCTWA50N120      		STMicroelectronicsTrans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube (Alt: SCTWA50N120)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 0
      • 1000:€22.1900
      • 500:€23.7900
      • 100:€24.6900
      • 50:€25.5900
      • 25:€26.5900
      • 10:€27.6900
      • 1:€30.2900
      SCTWA50N120
      DISTI # SCTWA50N120      		STMicroelectronicsTrans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCTWA50N120)
      RoHS: Compliant
      Min Qty: 600
      Container: Tube      		Americas - 0
      • 6000:$23.2900
      • 3600:$23.7900
      • 2400:$24.8900
      • 1200:$26.0900
      • 600:$27.3900
      SCTWA50N120
      DISTI # 20AC3771      		STMicroelectronicsPTD WBG & POWER RF0
      • 1:$22.8800
      SCTWA50N120
      DISTI # 511-SCTWA50N120      		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
      RoHS: Compliant      		0
      • 1:$35.3100
      • 5:$34.9500
      • 10:$32.5700
      • 25:$31.1100
      • 100:$27.8100
      • 250:$26.5300
      Imagen Parte # Descripción
      SCTWA50N120

      Mfr.#: SCTWA50N120

      OMO.#: OMO-SCTWA50N120

      		 MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
      SCTWA30N120

      Mfr.#: SCTWA30N120

      OMO.#: OMO-SCTWA30N120

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      SCTWA10N120

      Mfr.#: SCTWA10N120

      OMO.#: OMO-SCTWA10N120

      		 MOSFET
      SCTWA20N120

      Mfr.#: SCTWA20N120

      OMO.#: OMO-SCTWA20N120

      		 MOSFET
      SCTWA10N120

      Mfr.#: SCTWA10N120

      OMO.#: OMO-SCTWA10N120-STMICROELECTRONICS

      		 IC POWER MOSFET 1200V HIP247
      SCTWA20N120

      Mfr.#: SCTWA20N120

      OMO.#: OMO-SCTWA20N120-STMICROELECTRONICS

      		 IC POWER MOSFET 1200V HIP247
      SCTWA30N120

      Mfr.#: SCTWA30N120

      OMO.#: OMO-SCTWA30N120-STMICROELECTRONICS

      		 IC POWER MOSFET 1200V HIP247
      SCTWA50N120

      Mfr.#: SCTWA50N120

      OMO.#: OMO-SCTWA50N120-STMICROELECTRONICS

      		 MOSFET N-CH 1200V 65A HIP247
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de SCTWA50N120 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,00 US$
      0,00 US$
      10
      0,00 US$
      0,00 US$
      100
      0,00 US$
      0,00 US$
      500
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      1000
      0,00 US$
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      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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