SCH1337-T

SCH1337-TL-W vs SCH1337-TL-H vs SCH1337-TL-HX

 
PartNumberSCH1337-TL-WSCH1337-TL-HSCH1337-TL-HX
DescriptionMOSFET PCH 4V Power MOSFETRF Bipolar Transistors MOSFET SWITCHING DEVICEINTEGRATED CIRCUIT
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance292 mOhms--
Vgs th Gate Source Threshold Voltage2.6 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge3.9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation800 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
BrandON Semiconductor--
Fall Time10.6 ns--
Product TypeMOSFET--
Rise Time4.2 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time4.5 ns--
Unit Weight0.000106 oz0.000289 oz-
Series-SCH1337-
Package Case-SOT-563-6-
Transistor Type-1 P-Channel-
Id Continuous Drain Current-- 2 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Rds On Drain Source Resistance-150 mOhms-
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
SCH1337-TL-W MOSFET PCH 4V Power MOSFET
SCH1337-TL-H RF Bipolar Transistors MOSFET SWITCHING DEVICE
SCH1337-TL-HX INTEGRATED CIRCUIT
SCH1337-TL-W MOSFET P-CH 30V 2A SOT563
Top