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| PartNumber | RN2116MFV(TL3,T) | RN2116MFV(TPL3) | RN2116MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor PNP 4.7kohm -100mA -50V | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 4.7Kohms x 10Kohms | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
| RoHS | Y | - | - |
| Series | RN2116 | - | - |
| Packaging | Reel | Reel | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Mounting Style | - | SMD/SMT | - |
| Pd Power Dissipation | - | 150 mW | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Collector Emitter Voltage VCEO Max | - | - 50 V | - |
| Transistor Polarity | - | PNP | - |
| Emitter Base Voltage VEBO | - | - 7 V | - |
| Continuous Collector Current | - | - 100 mA | - |
| DC Collector Base Gain hfe Min | - | 50 | - |
| Typical Input Resistor | - | 4.7 kOhms | - |
| Typical Resistor Ratio | - | 0.47 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
RN2116MFV(TL3,T) | Bipolar Transistors - Pre-Biased Bias Resistor PNP 4.7kohm -100mA -50V | |
| RN2116MFV(TPL3) | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 4.7Kohms x 10Kohms | ||
| RN2116MFV(TL3,T) | Bipolar Transistors - Pre-Biased Bias Resistor PNP 4.7kohm -100mA -50V | ||
| RN2116MFVL3F | Nuevo y original | ||
| RN2116MFV | Nuevo y original |