PartNumber | RN2116,LF(CT | RN2116 | RN2116LF(CT |
Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | Bipolar Transistors - Pre-Biased SSM PLN(LF) TRAN 100MW, /200M | |
Manufacturer | Toshiba | Toshiba | - |
Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
RoHS | Y | - | - |
Transistor Polarity | PNP | PNP | - |
Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | - |
Typical Resistor Ratio | 0.47 | 0.47 | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-416-3 | - | - |
DC Collector/Base Gain hfe Min | 50 | - | - |
Collector Emitter Voltage VCEO Max | - 50 V | - | - |
Continuous Collector Current | - 100 mA | - 100 mA | - |
Pd Power Dissipation | 100 mW | - | - |
Series | RN2116 | - | - |
Packaging | Reel | Reel | - |
Emitter Base Voltage VEBO | - 7 V | - | - |
Brand | Toshiba | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.000212 oz | - | - |
Pd Power Dissipation | - | 150 mW | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 65 C | - |
Collector Emitter Voltage VCEO Max | - | - 50 V | - |
Emitter Base Voltage VEBO | - | - 7 V | - |
DC Collector Base Gain hfe Min | - | 50 | - |