RN1412T

RN1412TE85LF vs RN1412TE85LFCT-ND vs RN1412TE85LFDKR-ND

 
PartNumberRN1412TE85LFRN1412TE85LFCT-NDRN1412TE85LFDKR-ND
DescriptionBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor22 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSOT-346-3--
DC Collector/Base Gain hfe Min120--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Pd Power Dissipation200 mW--
SeriesRN1412--
PackagingReel--
Emitter Base Voltage VEBO5 V--
BrandToshiba--
Maximum DC Collector Current100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
RN1412TE85LF Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1412TE85LF Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1412TE85LFCT-ND Nuevo y original
RN1412TE85LFDKR-ND Nuevo y original
RN1412TE85LFTR-ND Nuevo y original
Top