 | | | |
| PartNumber | RN1412(TE85L,F) | RN1412 | RN1412(TE85LF) |
| Description | |||
| Manufacturer | - | Toshiba | - |
| Product Category | - | Transistors (BJT) - Single, Pre-Biased | - |
| Packaging | - | Reel | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SOT-346 | - |
| Configuration | - | Single | - |
| Pd Power Dissipation | - | 200 mW | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Transistor Polarity | - | NPN | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| Maximum DC Collector Current | - | 100 mA | - |
| Continuous Collector Current | - | 100 mA | - |
| DC Collector Base Gain hfe Min | - | 120 | - |
| Typical Input Resistor | - | 22 kOhms | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
RN1412TE85LF | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | |
| RN1412TE85LF | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | ||
| RN1412TE85LFCT-ND | Nuevo y original | ||
| RN1412TE85LFDKR-ND | Nuevo y original | ||
| RN1412TE85LFTR-ND | Nuevo y original | ||
| RN1412(TE85L,F) | Nuevo y original | ||
| RN1412 | Nuevo y original | ||
| RN1412(TE85LF) | Nuevo y original |