PartNumber | RGT8NL65DGTL | RGT8NS65DGC9 | RGT8NS65DGTL |
Description | IGBT Transistors FIELD STOP TRENCH IGBT | IGBT Transistors IGBT HIGH VOLT AND CURRENT AP | IGBT Transistors 650V 4A IGBT Stop Trench |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-263L-3 | TO-262-3 | TO-263-3 |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
Collector Emitter Saturation Voltage | 1.65 V | 1.65 V | 1.65 V |
Maximum Gate Emitter Voltage | 30 V | 30 V | 30 V |
Continuous Collector Current at 25 C | 8 A | 8 A | 8 A |
Pd Power Dissipation | 65 W | 65 W | 65 W |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Packaging | Reel | Tube | Reel |
Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Gate Emitter Leakage Current | 200 nA | 200 nA | +/- 200 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 50 | 1000 |
Subcategory | IGBTs | IGBTs | IGBTs |
Part # Aliases | RGT8NL65D | RGT8NS65D(TO-262) | RGT8NS65D(LPDS) |
Series | - | - | RGT8NS65D |
Continuous Collector Current Ic Max | - | - | 8 A |
Operating Temperature Range | - | - | - 40 C to + 175 C |
Continuous Collector Current | - | - | 4 A |
Unit Weight | - | - | 0.068654 oz |