RGT40TS

RGT40TS65DGC11 vs RGT40TS65D vs RGT40TS65DG

 
PartNumberRGT40TS65DGC11RGT40TS65DRGT40TS65DG
DescriptionIGBT Transistors 650V 20A IGBT Stop Trench
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough Hole-
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.65 V1.65 V-
Maximum Gate Emitter Voltage30 V+/- 30 V-
Continuous Collector Current at 25 C40 A40 A-
Pd Power Dissipation144 W--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesRGT40TS65DRGT40TS65D-
PackagingTubeTube-
Continuous Collector Current Ic Max40 A40 A-
Operating Temperature Range- 40 C to + 175 C--
BrandROHM Semiconductor--
Continuous Collector Current20 A--
Gate Emitter Leakage Current+/- 200 nA+/- 200 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesRGT40TS65D--
Unit Weight1.340411 oz1.340411 oz-
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247N-
Power Max-144W-
Reverse Recovery Time trr-58ns-
Current Collector Ic Max-40A-
Voltage Collector Emitter Breakdown Max-650V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-60A-
Vce on Max Vge Ic-2.1V @ 15V, 20A-
Switching Energy---
Gate Charge-40nC-
Td on off 25°C-22ns/75ns-
Test Condition-400V, 20A, 10 Ohm, 15V-
Pd Power Dissipation-144 W-
Collector Emitter Voltage VCEO Max-650 V-
Fabricante Parte # Descripción RFQ
RGT40TS65DGC11 IGBT Transistors 650V 20A IGBT Stop Trench
RGT40TS65DGC11 IGBT Transistors 650V 20A Field Stop Trench IGBT
RGT40TS65D Nuevo y original
RGT40TS65DG Nuevo y original
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