PartNumber | RGT40TM65DGC9 | RGT40TS65D | RGT40TS65DG |
Description | IGBT Transistors FIELD STOP TRENCH IGBT | ||
Manufacturer | ROHM Semiconductor | Rohm Semiconductor | - |
Product Category | IGBT Transistors | IGBTs - Single | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-220-3 | - | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 650 V | - | - |
Collector Emitter Saturation Voltage | 1.65 V | 1.65 V | - |
Maximum Gate Emitter Voltage | 30 V | +/- 30 V | - |
Continuous Collector Current at 25 C | 17 A | 40 A | - |
Pd Power Dissipation | 39 W | - | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Tube | Tube | - |
Brand | ROHM Semiconductor | - | - |
Gate Emitter Leakage Current | 200 nA | +/- 200 nA | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | RGT40TM65D | - | - |
Series | - | RGT40TS65D | - |
Unit Weight | - | 1.340411 oz | - |
Package Case | - | TO-247-3 | - |
Input Type | - | Standard | - |
Mounting Type | - | Through Hole | - |
Supplier Device Package | - | TO-247N | - |
Power Max | - | 144W | - |
Reverse Recovery Time trr | - | 58ns | - |
Current Collector Ic Max | - | 40A | - |
Voltage Collector Emitter Breakdown Max | - | 650V | - |
IGBT Type | - | Trench Field Stop | - |
Current Collector Pulsed Icm | - | 60A | - |
Vce on Max Vge Ic | - | 2.1V @ 15V, 20A | - |
Switching Energy | - | - | - |
Gate Charge | - | 40nC | - |
Td on off 25°C | - | 22ns/75ns | - |
Test Condition | - | 400V, 20A, 10 Ohm, 15V | - |
Pd Power Dissipation | - | 144 W | - |
Collector Emitter Voltage VCEO Max | - | 650 V | - |
Continuous Collector Current Ic Max | - | 40 A | - |