| PartNumber | RDN120N25FU6 | RDN100N20 |
| Description | MOSFET POWER MOSFET TR; TO-220FN; DRIVE VOLTAGE - 10V | MOSFET Trans MOSFET N-CH 200V 10A 3-Pin(3+Tab) TO-220FN Bulk |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 200 V |
| Id Continuous Drain Current | 12 A | 10 A |
| Rds On Drain Source Resistance | 160 mOhms | 360 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | - |
| Vgs Gate Source Voltage | 10 V | 30 V |
| Qg Gate Charge | 31 nC | - |
| Pd Power Dissipation | 40 W | 35 W |
| Configuration | Single | Single |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor |
| Product Type | MOSFET | MOSFET |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | RDN120N25 | RDN100N20FU6 |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Packaging | - | Bulk |
| Height | - | 8 mm |
| Length | - | 10 mm |
| Width | - | 4.5 mm |
| Fall Time | - | 26 ns |
| Rise Time | - | 29 ns |
| Typical Turn Off Delay Time | - | 38 ns |
| Typical Turn On Delay Time | - | 13 ns |