PartNumber | QS8K11TCR | QS8K11 | QS8K11TR |
Description | MOSFET 4V Drive Nch+Nch Si MOSFET | ||
Manufacturer | ROHM Semiconductor | ROHM | - |
Product Category | MOSFET | IC Chips | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TSMT-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 3.5 A | - | - |
Rds On Drain Source Resistance | 35 mOhms, 35 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 7 nC, 7nC | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.5 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Transistor Type | 2 N-Channel | - | - |
Brand | ROHM Semiconductor | - | - |
Forward Transconductance Min | 2.2 S, 2.2 S | - | - |
Fall Time | 7 ns, 7 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 25 ns, 25 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 25 ns, 25 ns | - | - |
Typical Turn On Delay Time | 10 ns, 10 ns | - | - |
Part # Aliases | QS8K11 | - | - |