QS8F

QS8F2TCR vs QS8F2 vs QS8F2 TR

 
PartNumberQS8F2TCRQS8F2QS8F2 TR
DescriptionMOSFET Complex Trans BIP PNP + MOS Pch
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryMOSFETTransistors - Special Purpose-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTSMT-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-Channel, PNPP-Channel PNP-
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current2.5 A--
Rds On Drain Source Resistance44 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge13 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelTape & Reel (TR)-
SeriesQS8F2QS8F2-
Transistor Type1 P-Channel, PNPPNP, P-Channel-
BrandROHM Semiconductor--
Fall Time85 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time130 ns--
Typical Turn On Delay Time9 ns--
Current Rating-2.5A, 2A-
Package Case-8-SMD, Flat Lead-
Mounting Type-Surface Mount-
Voltage Rated-12V, 30V-
Applications-General Purpose-
Supplier Device Package-TSMT8-
Fabricante Parte # Descripción RFQ
QS8F2TCR MOSFET Complex Trans BIP PNP + MOS Pch
QS8F2 Nuevo y original
QS8F2 TR Nuevo y original
QS8F2TCR MOSFET/TRANS P-CH/PNP TSMT8
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