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| PartNumber | PSMN4R3-80ES,127 | PSMN4R3-80PS,127 |
| Description | MOSFET N-Ch 80V 4.3 mOhms | MOSFET N-Ch 80V 4.3 mOhms |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | I2PAK-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V |
| Id Continuous Drain Current | 120 A | 120 A |
| Rds On Drain Source Resistance | 4.3 mOhms | 4.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 104 nC | 104 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 306 W | 306 W |
| Configuration | Single | Single |
| Packaging | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.084199 oz | 0.211644 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R3-80ES,127 | MOSFET N-Ch 80V 4.3 mOhms | |
| PSMN4R3-80PS,127 | MOSFET N-Ch 80V 4.3 mOhms | ||
| PSMN4R3-80PS,127 | MOSFET N-CH 80V 120A TO220AB | ||
| PSMN4R3-80ES,127 | MOSFET N-Ch 80V 4.3 mOhms | ||
| PSMN4R3-80ES | Nuevo y original | ||
| PSMN4R3-80PS127 | Now Nexperia PSMN4R3-80PS - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PSMN4R3-80ES127 | Now Nexperia PSMN4R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |