PSMN4R3

PSMN4R3-30BL,118 vs PSMN4R3-100ES,127 vs PSMN4R3-100PS,127

 
PartNumberPSMN4R3-30BL,118PSMN4R3-100ES,127PSMN4R3-100PS,127
DescriptionMOSFET Std N-chanMOSFETMOSFET N-Ch 100V 4.3 m std level MOSFETMOSFET N-Ch 100V 4.3 mo std level moSFET
ManufacturerNexperiaNexperiaNexperia
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleThrough Hole
Package / CaseTO-263-3I2PAK-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V100 V100 V
Id Continuous Drain Current80 A120 A120 A
Rds On Drain Source Resistance4.1 mOhms4.3 mOhms4.3 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation103 W338 W338 W
ConfigurationSingleSingleSingle
PackagingReelTubeTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandNexperiaNexperiaNexperia
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity8005050
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.139332 oz0.084199 oz0.211644 oz
Qg Gate Charge-170 nC170 nC
Fall Time-63 ns63 ns
Rise Time-91 ns91 ns
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
PSMN4R3-30PL,127 MOSFET N-CH 30V 4.3 mOhm Logic Level MOSFET
PSMN4R3-30BL,118 MOSFET Std N-chanMOSFET
PSMN4R3-100ES,127 MOSFET N-Ch 100V 4.3 m std level MOSFET
PSMN4R3-80ES,127 MOSFET N-Ch 80V 4.3 mOhms
PSMN4R3-100PS,127 MOSFET N-Ch 100V 4.3 mo std level moSFET
PSMN4R3-80PS,127 MOSFET N-Ch 80V 4.3 mOhms
PSMN4R3-100ES,127 MOSFET N-CH 100V 120A I2PAK
PSMN4R3-30PL,127 MOSFET N-CH 30V 100A TO220AB
PSMN4R3-80PS,127 MOSFET N-CH 80V 120A TO220AB
PSMN4R3-100PS,127 MOSFET N-Ch 100V 4.3 mo std level moSFET
PSMN4R3-80ES,127 MOSFET N-Ch 80V 4.3 mOhms
PSMN4R3-30BL,118 MOSFET N-CH 30V 100A D2PAK
PSMN4R3-100PS - Bulk (Alt: PSMN4R3-100PS)
PSMN4R3-100PS/ES Nuevo y original
PSMN4R3-100PS127 Nuevo y original
PSMN4R3-30BL118 - Bulk (Alt: PSMN4R3-30BL118)
PSMN4R3-30PL MOSFET,N CH,30V,100A,TO-220AB
PSMN4R3-30PL127 Now Nexperia PSMN4R3-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN4R3-80ES Nuevo y original
PSMN4R3-80PS127 Now Nexperia PSMN4R3-80PS - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN4R3-80ES127 Now Nexperia PSMN4R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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