PartNumber | PSMN4R3-30BL,118 | PSMN4R3-100ES,127 | PSMN4R3-100PS,127 |
Description | MOSFET Std N-chanMOSFET | MOSFET N-Ch 100V 4.3 m std level MOSFET | MOSFET N-Ch 100V 4.3 mo std level moSFET |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | Through Hole |
Package / Case | TO-263-3 | I2PAK-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 100 V | 100 V |
Id Continuous Drain Current | 80 A | 120 A | 120 A |
Rds On Drain Source Resistance | 4.1 mOhms | 4.3 mOhms | 4.3 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 103 W | 338 W | 338 W |
Configuration | Single | Single | Single |
Packaging | Reel | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Nexperia | Nexperia | Nexperia |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 800 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.084199 oz | 0.211644 oz |
Qg Gate Charge | - | 170 nC | 170 nC |
Fall Time | - | 63 ns | 63 ns |
Rise Time | - | 91 ns | 91 ns |