PartNumber | PMXB65ENEZ | PMXB65UPEZ |
Description | MOSFET 31 V, N-channel Trench MOSFET | MOSFET 12V P-channel Trench MOSFET |
Manufacturer | Nexperia | Nexperia |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Package / Case | DFN-1010D-3 | DFN-1010D-3 |
Packaging | Reel | Reel |
Brand | Nexperia | Nexperia |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs |
Mounting Style | - | SMD/SMT |
Number of Channels | - | 1 Channel |
Transistor Polarity | - | P-Channel |
Vds Drain Source Breakdown Voltage | - | 12 V |
Id Continuous Drain Current | - | 3.2 A |
Rds On Drain Source Resistance | - | 59 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1 V |
Vgs Gate Source Voltage | - | 8 V |
Qg Gate Charge | - | 12 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
Pd Power Dissipation | - | 1.07 W |
Configuration | - | Single |
Channel Mode | - | Enhancement |
Transistor Type | - | 1 P-Channel |
Forward Transconductance Min | - | 9.4 S |
Fall Time | - | 17 ns |
Rise Time | - | 22 ns |
Typical Turn Off Delay Time | - | 27 ns |
Typical Turn On Delay Time | - | 6.2 ns |
Unit Weight | - | 0.000045 oz |