 | | |
| PartNumber | PMT200EPEX | PMT200EPEAX |
| Description | MOSFET PMT200EPE/SOT223/SC-73 | MOSFET 70 V, P-channel Trench MOSFET |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-223-3 | SOT-223-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 70 V | - |
| Id Continuous Drain Current | 2.4 A | - |
| Rds On Drain Source Resistance | 167 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 15.9 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 8.3 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Forward Transconductance Min | 13.5 S | - |
| Fall Time | 20 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8 ns | - |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 42 ns | - |
| Typical Turn On Delay Time | 6 ns | - |
| Series | - | PMT200EPEA |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PMT200EPEX | MOSFET PMT200EPE/SOT223/SC-73 | |
| PMT200EPEAX | MOSFET 70 V, P-channel Trench MOSFET | ||
| PMT200EPEAX | MOSFET P-CHANNEL 70V 2.4A SC73 | ||
| PMT200EPEX | PMT200EPE/SOT223/SC-73 | ||
| PMT200EN | Nuevo y original | ||
| PMT200EN 115 | Nuevo y original | ||
| PMT200EN115 | Now Nexperia PMT200EN - Small Signal Field-Effect Transistor, SC-73 | ||
| PMT200EN135 | - Bulk (Alt: PMT200EN135) | ||
| PMT200EPEA | Nuevo y original | ||
| PMT20RG | SENSOR THROUGH-BEAM 20M | ||
| PMT20RGT | SENSOR THROUGH-BEAM 20M | ||
| PMT20RIT | SENSOR THROUGH-BEAM 20M | ||
NXP Semiconductors |
PMT200EN,115 | MOSFET N-CH 100V 1.8A SC-73 | |
| PMT200EN,135 | MOSFET N-CH 100V 1.8A SC-73 |