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| PartNumber | NX3008PBKW,115 | NX3008PBKW | NX3008PBKW 115 |
| Description | MOSFET 30V 200 MA P-CH TRENCH MOSFET | ||
| Manufacturer | Nexperia | NXP | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 200 mA | - | - |
| Rds On Drain Source Resistance | 4.1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 0.55 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 310 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Product | Trench MOSFET | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | Trench MOSFET | - | - |
| Brand | Nexperia | - | - |
| Forward Transconductance Min | 160 mS | - | - |
| Fall Time | 38 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 65 ns | - | - |
| Typical Turn On Delay Time | 19 ns | - | - |
| Unit Weight | 0.000176 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
NX3008PBKW,115 | MOSFET 30V 200 MA P-CH TRENCH MOSFET | |
| NX3008PBKW,115 | MOSFET P-CH 30V SOT323 | ||
| NX3008PBKW | Nuevo y original | ||
| NX3008PBKW 115 | Nuevo y original | ||
| NX3008PBKW115 | Now Nexperia NX3008PBKW - Small Signal Field-Effect Transisto |