PartNumber | NX3008CBKV,115 | NX3008CBKV | NX3008CBKV115 |
Description | MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET | ||
Manufacturer | Nexperia | NXP Semiconductors | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-666-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel, P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 400 mA | - | - |
Rds On Drain Source Resistance | 1 Ohms, 2.8 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Qg Gate Charge | 170 pC, 230 pC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 500 mW (1/2 W) | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Product | MOSFET | - | - |
Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
Type | Trench MOSFET | - | - |
Brand | Nexperia | - | - |
Forward Transconductance Min | 310 mS, 160 mS | - | - |
Fall Time | 19 ns, 38 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 30 ns, 11 ns | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 69 ns, 65 ns | - | - |
Typical Turn On Delay Time | 15 ns, 19 ns | - | - |
Series | - | Automotive, AEC-Q101, TrenchMOS | - |
Package Case | - | SOT-563, SOT-666 | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-666 | - |
FET Type | - | N and P-Channel | - |
Power Max | - | 500mW | - |
Drain to Source Voltage Vdss | - | 30V | - |
Input Capacitance Ciss Vds | - | 50pF @ 15V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 400mA, 220mA | - |
Rds On Max Id Vgs | - | 1.4 Ohm @ 350mA, 4.5V | - |
Vgs th Max Id | - | 1.1V @ 250μA | - |
Gate Charge Qg Vgs | - | 0.68nC @ 4.5V | - |