NX3008CBKV

NX3008CBKV,115 vs NX3008CBKV vs NX3008CBKV115

 
PartNumberNX3008CBKV,115NX3008CBKVNX3008CBKV115
DescriptionMOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-666-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current400 mA--
Rds On Drain Source Resistance1 Ohms, 2.8 Ohms--
Vgs th Gate Source Threshold Voltage900 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge170 pC, 230 pC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReelDigi-ReelR Alternate Packaging-
ProductMOSFET--
Transistor Type1 N-Channel, 1 P-Channel--
TypeTrench MOSFET--
BrandNexperia--
Forward Transconductance Min310 mS, 160 mS--
Fall Time19 ns, 38 ns--
Product TypeMOSFET--
Rise Time30 ns, 11 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time69 ns, 65 ns--
Typical Turn On Delay Time15 ns, 19 ns--
Series-Automotive, AEC-Q101, TrenchMOS-
Package Case-SOT-563, SOT-666-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-666-
FET Type-N and P-Channel-
Power Max-500mW-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-50pF @ 15V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-400mA, 220mA-
Rds On Max Id Vgs-1.4 Ohm @ 350mA, 4.5V-
Vgs th Max Id-1.1V @ 250μA-
Gate Charge Qg Vgs-0.68nC @ 4.5V-
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
NX3008CBKV,115 MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET
NX3008CBKV,115 MOSFET N/P-CH 30V SOT666
NX3008CBKV Nuevo y original
NX3008CBKV115 Nuevo y original
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