PartNumber | NVMFD5C470NLT1G | NVMFD5C470NT1G | NVMFD5C470NLWFT1G |
Description | MOSFET T6 40V LL S08FL DS | MOSFET 40V 11.7 MOHM T8 SO-8FL DUAL DFN-8 | MOSFET T6 40V LL S08FL DS |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | DFN-8 | DFN-8 | DFN-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 36 A | 36 A | 36 A |
Rds On Drain Source Resistance | 9.2 mOhms, 9.2 mOhms | 11.7 mOhms | 9.2 mOhms, 9.2 mOhms |
Vgs th Gate Source Threshold Voltage | 1.2 V | 2.5 V | 1.2 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 9 nC, 9 nC | 8 nC | 9 nC, 9 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 24 W | 28 W | 24 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Series | NVMFD5C470NL | - | NVMFD5C470NL |
Transistor Type | 2 N-Channel | - | 2 N-Channel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Forward Transconductance Min | 30 S, 30 S | - | 30 S, 30 S |
Fall Time | 36 ns, 36 ns | 4.5 ns | 36 ns, 36 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 55 ns, 55 ns | 14 ns | 55 ns, 55 ns |
Factory Pack Quantity | 1500 | 1500 | 1500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns, 20 ns | 16 ns | 20 ns, 20 ns |
Typical Turn On Delay Time | 9.3 ns, 9.3 ns | 8 ns | 9.3 ns, 9.3 ns |