PartNumber | NVMD6N04R2G | NVMD6N03R2G | NVMD6N04R |
Description | MOSFET NFET SO8 40V | MOSFET NFET 30V 6A 0.032R | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOIC-8 | SOIC-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 30 V | - |
Id Continuous Drain Current | 5.8 A | 6 A | - |
Rds On Drain Source Resistance | 34 mOhms | 24 mOhms | - |
Configuration | Dual | Dual | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | - |
Series | NTMD6N04 | - | - |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.019048 oz | 0.019048 oz | - |
Vgs th Gate Source Threshold Voltage | - | 1.8 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 19 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 2 W | - |
Fall Time | - | 34 ns | - |
Rise Time | - | 27 ns | - |
Typical Turn Off Delay Time | - | 22 ns | - |
Typical Turn On Delay Time | - | 13 ns | - |