 | |  | |
| PartNumber | NVMD6N04R2G | NVMD6N03R2G | NVMD6N04R |
| Description | MOSFET NFET SO8 40V | MOSFET NFET 30V 6A 0.032R | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOIC-8 | SOIC-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 30 V | - |
| Id Continuous Drain Current | 5.8 A | 6 A | - |
| Rds On Drain Source Resistance | 34 mOhms | 24 mOhms | - |
| Configuration | Dual | Dual | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Series | NTMD6N04 | - | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 1.8 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 19 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 2 W | - |
| Fall Time | - | 34 ns | - |
| Rise Time | - | 27 ns | - |
| Typical Turn Off Delay Time | - | 22 ns | - |
| Typical Turn On Delay Time | - | 13 ns | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NVMD6N04R2G | MOSFET NFET SO8 40V | ||
| NVMD6P02R2G | MOSFET PFET SO8 20V 7.8A 33MOHM | ||
| NVMD6N04R | Nuevo y original | ||
ON Semiconductor |
NVMD6N03R2G | MOSFET NFET 30V 6A 0.032R | |
| NVMD6N03R2G | MOSFET 2N-CH 30V 6A 8SOIC | ||
| NVMD6N04R2G | MOSFET 2N-CH 40V 4.6A 8-SOIC | ||
| NVMD6P02R2G | RF Bipolar Transistors MOSFET PFET SO8 20V 7.8A 33MOHM |