PartNumber | NVD5890NLT4G | NVD5890N | NVD5890NL |
Description | MOSFET NFET DPAK 40V 123A 3.7MOH | ||
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 123 A | - | - |
Rds On Drain Source Resistance | 3.7 mOhms | - | - |
Configuration | Single | - | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Reel |
Series | NVD5890NL | NVD5890NL | NVD5890NL |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | ON Semiconductor | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Package Case | - | TO-252-3 | TO-252-3 |
Id Continuous Drain Current | - | 123 A | 123 A |
Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
Rds On Drain Source Resistance | - | 3.7 mOhms | 3.7 mOhms |