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| PartNumber | NTZD5110N | NTZD5110NT1G | NTZD5110NT1G-CUT TAPE |
| Description | MOSFET 2N-CH 60V 0.294A SOT563 | ||
| Manufacturer | - | ON Semiconductor | - |
| Product Category | - | IC Chips | - |
| Series | - | NTZD5110N | - |
| Packaging | - | Digi-ReelR Alternate Packaging | - |
| Unit Weight | - | 0.000289 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SOT-563, SOT-666 | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | SOT-563 | - |
| Configuration | - | Dual | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 250mW | - |
| Transistor Type | - | 2 N-Channel | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 24.5pF @ 20V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 294mA | - |
| Rds On Max Id Vgs | - | 1.6 Ohm @ 500mA, 10V | - |
| Vgs th Max Id | - | 2.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 0.7nC @ 4.5V | - |
| Pd Power Dissipation | - | 250 mW | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 7.3 ns | - |
| Rise Time | - | 7.3 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 294 mA | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 1.6 Ohms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 63.7 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Channel Mode | - | Enhancement | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor |
NTZD5110NT5G | MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH | |
| NTZD5110NT1G | MOSFET 2N-CH 60V 0.294A SOT563 | ||
| NTZD5110NT5G | MOSFET 2N-CH 60V 0.294A SOT563 | ||
| NTZD5110N | Nuevo y original | ||
| NTZD5110NT1G-CUT TAPE | Nuevo y original |