NTZD3152P

NTZD3152PT1G vs NTZD3152PT1H vs NTZD3152PT5G

 
PartNumberNTZD3152PT1GNTZD3152PT1HNTZD3152PT5G
DescriptionMOSFET -20V -430mA Dual P-ChannelMOSFET PFET SOT563 20V 430MA TRMOSFET 2P-CH 20V 0.43A SOT-563
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6SOT-563-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current430 mA430 mA-
Rds On Drain Source Resistance2 Ohms, 2 Ohms900 mOhms-
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage1.8 V--
Qg Gate Charge1.7 nC, 1.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation280 mW--
ConfigurationDualDual-
Channel ModeEnhancement--
PackagingReelReel-
Height0.55 mm--
Length1.6 mm--
ProductMOSFET Small Signal--
SeriesNTZD3152PNTZD3152P-
Transistor Type2 P-Channel2 P-Channel-
Width1.2 mm--
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min1 S, 1 S--
Fall Time19 ns, 19 ns--
Product TypeMOSFETMOSFET-
Rise Time12 ns, 12 ns--
Factory Pack Quantity40004000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time35 ns, 35 ns--
Typical Turn On Delay Time10 ns, 10 ns--
Unit Weight0.000106 oz0.000106 oz-
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
NTZD3152PT1G MOSFET -20V -430mA Dual P-Channel
NTZD3152PT1H MOSFET PFET SOT563 20V 430MA TR
NTZD3152PT1G MOSFET 2P-CH 20V 0.43A SOT-563
NTZD3152PT1H MOSFET 2P-CH 20V 0.43A SOT563
NTZD3152PT5G MOSFET 2P-CH 20V 0.43A SOT-563
NTZD3152P Nuevo y original
NTZD3152PT1G-CUT TAPE Nuevo y original
NTZD3152PT1 Nuevo y original
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