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| PartNumber | NTZD3158PT1G | NTZD5110NT5G | NTZD5110NT1G |
| Description | MOSFET PFET SOT563 20V 430MA TR | MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH | MOSFET 2N-CH 60V 0.294A SOT563 |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Series | NTZD3158P | - | NTZD5110N |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 4000 | 8000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | SOT-563-6 | - |
| Number of Channels | - | 2 Channel | 2 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 294 mA | - |
| Rds On Drain Source Resistance | - | 1.6 Ohms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 250 mW | - |
| Configuration | - | Dual | Dual |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 0.55 mm | - |
| Length | - | 1.6 mm | - |
| Product | - | MOSFET Small Signal | - |
| Transistor Type | - | 2 N-Channel | 2 N-Channel |
| Width | - | 1.2 mm | - |
| Fall Time | - | 7.3 ns | 7.3 ns |
| Rise Time | - | 7.3 ns | 7.3 ns |
| Typical Turn Off Delay Time | - | 63.7 ns | 63.7 ns |
| Typical Turn On Delay Time | - | 12 ns | 12 ns |
| Unit Weight | - | 0.000106 oz | 0.000289 oz |
| Package Case | - | - | SOT-563, SOT-666 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-563 |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 250mW |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 24.5pF @ 20V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 294mA |
| Rds On Max Id Vgs | - | - | 1.6 Ohm @ 500mA, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 0.7nC @ 4.5V |
| Pd Power Dissipation | - | - | 250 mW |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 294 mA |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 1.6 Ohms |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor |
NTZS3151PT1G | MOSFET -20V -950mA P-Channel | |
| NTZD3158PT1G | MOSFET PFET SOT563 20V 430MA TR | ||
| NTZS3151PT1H | MOSFET PFET SOT563 20V 950MA TR | ||
| NTZD5110NT5G | MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH | ||
| NTZD3158PT1G | MOSFET 2P-CH 20V 0.43A SOT563 | ||
| NTZD5110NT1G | MOSFET 2N-CH 60V 0.294A SOT563 | ||
| NTZD5110NT5G | MOSFET 2N-CH 60V 0.294A SOT563 | ||
| NTZS3151PT1G | MOSFET P-CH 20V 0.86A SOT-563 | ||
| NTZS3151PT5G | MOSFET P-CH 20V 0.86A SOT-563 | ||
| NTZS3151PT1H | IGBT Transistors MOSFET PFET SOT563 20V 950MA TR | ||
| NTZD5110N | Nuevo y original | ||
| NTZS3151P | Nuevo y original | ||
| NTZS3151PT1 | Nuevo y original | ||
| NTZS3151PT1G/TXX | Nuevo y original | ||
| NTZS3151PT1GOSTR-ND | Nuevo y original | ||
| NTZS315PT1G | Nuevo y original | ||
| NTZY-3 | Nuevo y original | ||
| NTZY-5 | Nuevo y original | ||
| NTZY-6 | Nuevo y original | ||
| NTZZ-FSG | Nuevo y original | ||
| NTZD5110NT1G-CUT TAPE | Nuevo y original | ||
| NTZS3151PT1G-CUT TAPE | Nuevo y original |