PartNumber | NTUD3169CZT5G | NTUD3169CZ | NTUD3169CZN/P |
Description | MOSFET 20V Mosfet Complementary | ||
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-963-6 | - | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 280 mA, 200 mA | - | - |
Rds On Drain Source Resistance | 1.5 Ohms, 10 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
Vgs Gate Source Voltage | 4.5 V, - 1.5 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 200 mW | - | - |
Configuration | Dual | N-Channel P-Channel | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 0.37 mm | - | - |
Length | 1 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | NTUD3169CZ | NTUD3169CZ | - |
Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
Type | Small Signal MOSFET | - | - |
Width | 0.8 mm | - | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 0.48 S, 0.35 S | - | - |
Fall Time | 80 ns, 145 ns | 80 ns 145 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 25.5 ns, 46 ns | 25.5 nd 46 ns | - |
Factory Pack Quantity | 8000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 142 ns, 196 ns | 142 ns 196 ns | - |
Typical Turn On Delay Time | 16.5 ns, 26 ns | 16.5 ns 26 ns | - |
Unit Weight | 0.000042 oz | - | - |
Package Case | - | SOT-963 | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-963 | - |
FET Type | - | N and P-Channel | - |
Power Max | - | 125mW | - |
Drain to Source Voltage Vdss | - | 20V | - |
Input Capacitance Ciss Vds | - | 12.5pF @ 15V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 220mA, 200mA | - |
Rds On Max Id Vgs | - | 1.5 Ohm @ 100mA, 4.5V | - |
Vgs th Max Id | - | 1V @ 250μA | - |
Gate Charge Qg Vgs | - | - | - |
Pd Power Dissipation | - | 200 mW | - |
Vgs Gate Source Voltage | - | 8 V | - |
Id Continuous Drain Current | - | 220 mA | - |
Vds Drain Source Breakdown Voltage | - | 20 V | - |
Rds On Drain Source Resistance | - | 1.5 Ohms 5 Ohms | - |
Forward Transconductance Min | - | 0.48 S 0.35 S | - |