 |  | | |
| PartNumber | NTMSD6N303R2 | NTMSD6N303R2G | NTMSD6N303R2SG |
| Description | MOSFET 30V 6A N-Channel | MOSFET N-CH 30V 6A 8-SOIC | MOSFET N-CH 30V 6A 8-SOIC |
| Manufacturer | ON Semiconductor | ON | ON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOIC-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.5 mm | - | - |
| Length | 5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 34 ns, 45 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 27 ns, 22 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns, 45 ns | - | - |
| Typical Turn On Delay Time | 13 ns, 9 ns | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor |
NTMSD6N303R2 | MOSFET 30V 6A N-Channel | |
| NTMSD6N303R2 | MOSFET N-CH 30V 6A 8-SOIC | ||
| NTMSD6N303R2G | MOSFET N-CH 30V 6A 8-SOIC | ||
| NTMSD6N303R2SG | MOSFET N-CH 30V 6A 8-SOIC | ||
| NTMSD6N303R2S | Nuevo y original |