NTLJD318

NTLJD3182FZTAG vs NTLJD3181PZTAG vs NTLJD3181PZTBG

 
PartNumberNTLJD3182FZTAGNTLJD3181PZTAGNTLJD3181PZTBG
DescriptionMOSFET 20V 4.1A UCOOL FETKYMOSFET 2P-CH 20V 2.2A 6WDFNMOSFET 2P-CH 20V 2.2A 6WDFN
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseWDFN-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.2 A--
Rds On Drain Source Resistance100 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Tape & Reel (TR)
Height0.75 mm--
Length2 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel--
Width2 mm--
BrandON Semiconductor--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time6.6 ns--
Series---
Package Case--6-WDFN Exposed Pad
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--6-WDFN (2x2)
FET Type--2 P-Channel (Dual)
Power Max--710mW
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--450pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--2.2A
Rds On Max Id Vgs--100 mOhm @ 2A, 4.5V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--7.8nC @ 4.5V
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
NTLJD3183CZTAG MOSFET 20V 4.1A UCOOL CMPLM
NTLJD3183CZTBG MOSFET 20V 4.1A UCOOL CMPLM
NTLJD3182FZTAG MOSFET 20V 4.1A UCOOL FETKY
NTLJD3181PZTAG MOSFET 2P-CH 20V 2.2A 6WDFN
NTLJD3183CZTAG MOSFET N/P-CH 20V 6WDFN
NTLJD3181PZTBG MOSFET 2P-CH 20V 2.2A 6WDFN
NTLJD3182FZTAG MOSFET P-CH 20V 2.2A 6-WDFN
NTLJD3182FZTBG MOSFET P-CH 20V 2.2A 6-WDFN
NTLJD3183CZTBG MOSFET N/P-CH 20V 6WDFN
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