PartNumber | NTHD4N02FT1G | NTHD4N02FT1 |
Description | MOSFET 20V 3.9A N-Channel w/3.7A Schottky | MOSFET 20V 3.9A N-Channel |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET |
RoHS | Y | N |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | ChipFET-8 | ChipFET-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V |
Id Continuous Drain Current | 3.9 A | 3.9 A |
Rds On Drain Source Resistance | 80 mOhms | 80 mOhms |
Vgs Gate Source Voltage | 12 V | 12 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 910 mW | 910 mW |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Reel | Reel |
Height | 1.05 mm | 1.05 mm |
Length | 3.05 mm | 3.05 mm |
Product | MOSFET Small Signal | MOSFET Small Signal |
Transistor Type | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET |
Width | 1.65 mm | 1.65 mm |
Brand | ON Semiconductor | ON Semiconductor |
Forward Transconductance Min | 6 S | 6 S |
Fall Time | 9 ns | 9 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 9 ns | 9 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 10 ns | 10 ns |
Typical Turn On Delay Time | 5 ns | 5 ns |
Unit Weight | 0.002998 oz | 0.002998 oz |