NTGS1

NTGS1135PT1G vs NTGS1N03LT1G vs NTGS1P02LT1G

 
PartNumberNTGS1135PT1GNTGS1N03LT1GNTGS1P02LT1G
DescriptionMOSFET 8V Power Mosfet P-Channel
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSOP-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage8 V--
Id Continuous Drain Current5.8 A--
Rds On Drain Source Resistance100 mOhms--
Vgs Gate Source Voltage6 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.94 mm--
Length3 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel--
TypePower MOSFET--
Width1.5 mm--
BrandON Semiconductor--
Forward Transconductance Min1.2 S--
Fall Time3.9 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time128 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.000705 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor
NTGS1135PT1G MOSFET 8V Power Mosfet P-Channel
NTGS1135PT1G MOSFET P-CH 8V 4.6A 6-TSOP
NTGS1N03LT1G Nuevo y original
NTGS1P02LT1G Nuevo y original
NTGS1P03LT1G Nuevo y original
NTGS1P03LT1G , FLU073XJ Nuevo y original
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