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| PartNumber | NTD4960N-1G | NTD4960NT4G | NTD4960N-35G |
| Description | MOSFET NFET IPAK 30V 55A 8mOHM | MOSFET NFET DPAK 30V 55A 8mOHM | MOSFET NFET DPAK 30V 55A 8mOHM |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
| Package / Case | TO-247-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 11.1 A | 11.1 A | 11.1 A |
| Rds On Drain Source Resistance | 6.1 mOhms | 6.1 mOhms | 6.1 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 11 nC | 11 nC | 11 nC |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Pd Power Dissipation | 1.68 W | 1.68 W | 1.68 W |
| Configuration | Single | Single | Single |
| Packaging | Tube | Reel | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 48 S | 48 S | 48 S |
| Fall Time | 4 ns | 4 ns | 4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 20 ns | 20 ns |
| Factory Pack Quantity | 75 | 2500 | 75 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor |
NTD4960N-1G | MOSFET NFET IPAK 30V 55A 8mOHM | |
| NTD4960NT4G | MOSFET NFET DPAK 30V 55A 8mOHM | ||
| NTD4960N-35G | MOSFET NFET DPAK 30V 55A 8mOHM | ||
| NTD4960N-1G | MOSFET N-CH 30V 11.1A IPAK | ||
| NTD4960N-35G | MOSFET N-CH 30V 11.1A IPAK | ||
| NTD4960NT4G | MOSFET N-CH 30V 11.1A DPAK |