 |  | | |
| PartNumber | NSVBCP56-10T3G | NSVBCP53-16T3G | NSVBCP68T1G |
| Description | Bipolar Transistors - BJT SS SOT223 GP XSTR NPN 80V | Bipolar Transistors - BJT SS SOT223 GP XSTR PNP 80V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 500 mV | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 130 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 160 at 150 mA, 2 V | - | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 63 at 150 mA, 2 V | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 4000 | 4000 | - |
| Subcategory | Transistors | Transistors | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| NSVBCP56-10T3G | Bipolar Transistors - BJT SS SOT223 GP XSTR NPN 80V | ||
| NSVBCP53-16T3G | Bipolar Transistors - BJT SS SOT223 GP XSTR PNP 80V | ||
| NSVBCP69T1G | Bipolar Transistors - Pre-Biased LOW VOLTAGE-HIGH CURRENT | ||
| NSVBCP68T1G | Nuevo y original | ||
ON Semiconductor |
NSVBCP53-16T3G | TRANS PNP 80V 1.5A SOT-223 | |
| NSVBCP69T1G | TRANS PNP 20V 1A SOT223 | ||
| NSVBCP56-10T3G | Trans GP BJT NPN 80V 1A Automotive 4-Pin(3+Tab) SOT-223 T/R |