PartNumber | NSV1C201LT1G | NSV1C201L | NSV1C201M24 |
Description | Bipolar Transistors - BJT NPN 100V SOT23 LOW V-SAT | ||
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single, Pre-Biased | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-23-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 100 V | - | - |
Collector Base Voltage VCBO | 140 V | - | - |
Emitter Base Voltage VEBO | 7 V | - | - |
Collector Emitter Saturation Voltage | 30 mV | - | - |
Maximum DC Collector Current | 3 A | - | - |
Gain Bandwidth Product fT | 110 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | NSS1C201L | NSS1C201L | - |
DC Current Gain hFE Max | 360 at 500 mA, 2 V | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Brand | ON Semiconductor | - | - |
Continuous Collector Current | 2 A | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Pd Power Dissipation | 490 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.000282 oz | - | - |
Package Case | - | TO-236-3, SC-59, SOT-23-3 | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-23-3 (TO-236) | - |
Power Max | - | 490mW | - |
Transistor Type | - | NPN | - |
Current Collector Ic Max | - | 2A | - |
Voltage Collector Emitter Breakdown Max | - | 100V | - |
DC Current Gain hFE Min Ic Vce | - | 120 @ 500mA, 2V | - |
Vce Saturation Max Ib Ic | - | 150mV @ 200mA, 2A | - |
Current Collector Cutoff Max | - | 100nA (ICBO) | - |
Frequency Transition | - | 110MHz | - |