NSV1C201

NSV1C201LT1G vs NSV1C201L vs NSV1C201M24

 
PartNumberNSV1C201LT1GNSV1C201LNSV1C201M24
DescriptionBipolar Transistors - BJT NPN 100V SOT23 LOW V-SAT
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO140 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage30 mV--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT110 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSS1C201LNSS1C201L-
DC Current Gain hFE Max360 at 500 mA, 2 V--
PackagingReelDigi-ReelR Alternate Packaging-
BrandON Semiconductor--
Continuous Collector Current2 A--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation490 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3 (TO-236)-
Power Max-490mW-
Transistor Type-NPN-
Current Collector Ic Max-2A-
Voltage Collector Emitter Breakdown Max-100V-
DC Current Gain hFE Min Ic Vce-120 @ 500mA, 2V-
Vce Saturation Max Ib Ic-150mV @ 200mA, 2A-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-110MHz-
Fabricante Parte # Descripción RFQ
NSV1C201MZ4T1G Bipolar Transistors - BJT 100V NPN LOW VCE(SAT) TRA
NSV1C201LT1G Bipolar Transistors - BJT NPN 100V SOT23 LOW V-SAT
NSV1C201L Nuevo y original
NSV1C201M24 Nuevo y original
ON Semiconductor
ON Semiconductor
NSV1C201LT1G Bipolar Transistors - BJT NPN 100V SOT23 LOW V-SAT
NSV1C201MZ4T1G Bipolar Transistors - BJT 100V NPN LOW VCE(SAT) TRA
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