NSS1C200M stock, NSS1C200M, NSS1C200MZ4T3G

NSS1C200MZ4T3G vs NSS1C200MZ4T1G vs NSS1C200MZT1G


PartNumber	NSS1C200MZ4T3G	NSS1C200MZ4T1G	NSS1C200MZT1G
Description	Bipolar Transistors - BJT PNP BIP POWER TRAN SOT223	Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-223-4	SOT-223-4	-
Transistor Polarity	PNP	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	100 V	100 V	-
Collector Base Voltage VCBO	140 V	140 V	-
Emitter Base Voltage VEBO	7 V	7 V	-
Maximum DC Collector Current	3 A	3 A	-
Gain Bandwidth Product fT	120 MHz	120 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	NSS1C200	NSS1C200	-
DC Current Gain hFE Max	150	150	-
Height	1.57 mm	1.57 mm	-
Length	6.5 mm	6.5 mm	-
Packaging	Reel	Reel	-
Width	3.5 mm	3.5 mm	-
Brand	ON Semiconductor	ON Semiconductor	-
DC Collector/Base Gain hfe Min	120	150	-
Pd Power Dissipation	2000 mW	2000 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	4000	1000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.003951 oz	0.003951 oz	-

Search Part Number : "NSS1C200M", Match & Start with "NSS1C200M" - Total : 5

Fabricante	Parte #	Descripción
	NSS1C200MZ4T3G	Bipolar Transistors - BJT PNP BIP POWER TRAN SOT223
	NSS1C200MZ4T1G	Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN
	NSS1C200MZT1G	Nuevo y original
ON Semiconductor	NSS1C200MZ4T3G	Bipolar Transistors - BJT PNP BIP POWER TRAN SOT223
ON Semiconductor	NSS1C200MZ4T1G	Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN