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NSS1C200MZ4T3G

NSS1C200MZ4T3G
Mfr. #:
NSS1C200MZ4T3G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT PNP BIP POWER TRAN SOT223
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NSS1C200MZ4T3G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSS1C200MZ4T3G DatasheetNSS1C200MZ4T3G Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-223-4
Polaridad del transistor:
PNP
Configuración:
Único
Voltaje colector-emisor VCEO Max:
100 V
Colector- Voltaje base VCBO:
140 V
Emisor- Voltaje base VEBO:
7 V
Corriente máxima del colector de CC:
3 A
Producto de ganancia de ancho de banda fT:
120 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
NSS1C200
Ganancia de corriente CC hFE Max:
150
Altura:
1.57 mm
Longitud:
6.5 mm
Embalaje:
Carrete
Ancho:
3.5 mm
Marca:
EN Semiconductor
Colector de CC / Ganancia base hfe Min:
120
Pd - Disipación de energía:
2000 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
4000
Subcategoría:
Transistores
Unidad de peso:
0.003951 oz
Tags
NSS1C200M, NSS1C200, NSS1C20, NSS1C2, NSS1C, NSS1, NSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT PNP 100V 3A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R
***ark
PNP SOT223 BIP POWER TRAN / 4000 REEL
Parte # Mfg. Descripción Valores Precio
NSS1C200MZ4T3G
DISTI # NSS1C200MZ4T3G-ND		ON SemiconductorTRANS PNP 100V 2A SOT-223
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.2295
NSS1C200MZ4T3G
DISTI # NSS1C200MZ4T3G		ON SemiconductorTrans GP BJT PNP 100V 3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NSS1C200MZ4T3G)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1839
  • 8000:$0.1829
  • 16000:$0.1799
  • 24000:$0.1779
  • 40000:$0.1739
NSS1C200MZ4T3G
DISTI # 863-NSS1C200MZ4T3G		ON SemiconductorBipolar Transistors - BJT PNP BIP POWER TRAN SOT223
RoHS: Compliant		3697
  • 1:$0.6200
  • 10:$0.5100
  • 100:$0.3110
  • 1000:$0.2400
  • 4000:$0.2050
  • 8000:$0.1910
  • 24000:$0.1810
NSS1C200MZ4T1G
DISTI # 863-NSS1C200MZ4T1G		ON SemiconductorBipolar Transistors - BJT PNP SOT223 BIP POWER TRAN
RoHS: Compliant		4021
  • 1:$0.5900
  • 10:$0.4850
  • 100:$0.2960
  • 1000:$0.2280
  • 2000:$0.1950
  • 10000:$0.1820
  • 25000:$0.1720
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    		 DIODE ZENER 4.3V 5W AXIAL
    Disponibilidad
    Valores:
    Available
    En orden:
    1990
    Ingrese la cantidad:
    El precio actual de NSS1C200MZ4T3G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,62 US$
    0,62 US$
    10
    0,51 US$
    5,10 US$
    100
    0,31 US$
    31,10 US$
    1000
    0,24 US$
    240,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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