PartNumber | NPTB00004A | NPTB00004 | NPTB00004D |
Description | RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT | RF POWER TRANSISTOR | |
Manufacturer | MACOM | NITRONEX | - |
Product Category | RF JFET Transistors | RF FETs | - |
RoHS | Y | - | - |
Transistor Type | HEMT | - | - |
Technology | GaN Si | - | - |
Gain | 16 dB | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 1.4 A | - | - |
Maximum Operating Temperature | + 200 C | - | - |
Pd Power Dissipation | 11.6 W | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOIC-8 | - | - |
Packaging | Tray | - | - |
Operating Frequency | 6 GHz | - | - |
Brand | MACOM | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | RF JFET Transistors | - | - |
Rds On Drain Source Resistance | 1.6 Ohms | - | - |
Factory Pack Quantity | 95 | - | - |
Subcategory | Transistors | - | - |
Vgs th Gate Source Threshold Voltage | - 1.6 V | - | - |
Unit Weight | 0.007760 oz | - | - |