NPT2 stock, NPT2, NPT2021 | OMO Electronic


PartNumber	NPT2	NPT2018	NPT2020
Description		RF POWER TRANSISTOR	RF POWER TRANSISTOR
Manufacturer	MACOM	-	-
Product Category	Transistors - FETs, MOSFETs - Single	-	-
Packaging	Tray	-	-
Unit Weight	0.067412 oz	-	-
Mounting Style	Screw	-	-
Operating Temperature Range	- 40 C to + 85 C	-	-
Package Case	TO-272	-	-
Technology	GaN Si	-	-
Configuration	Single	-	-
Transistor Type	HEMT	-	-
Gain	14.2 dB	-	-
Output Power	45 W	-	-
Maximum Operating Temperature	+ 85 C	-	-
Minimum Operating Temperature	- 40 C	-	-
Operating Frequency	2.5 GHz	-	-
Id Continuous Drain Current	14 mA	-	-
Vds Drain Source Breakdown Voltage	160 V	-	-
Vgs th Gate Source Threshold Voltage	- 1.8 V	-	-
Rds On Drain Source Resistance	340 mOhms	-	-
Transistor Polarity	N-Channel	-	-
Vgs Gate Source Breakdown Voltage	3 V	-	-

Search Part Number : "NPT2", Match & Start with "NPT2" - Total : 20

Fabricante	Parte #	Descripción
MACOM	NPT2021	RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT
	NPT2022	RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT
	NPT25100B	RF JFET Transistors 2.1-2.7GHz 125W Gain 16.5dB GaN
	NPT2	Nuevo y original
	NPT2018	RF POWER TRANSISTOR
	NPT2020	RF POWER TRANSISTOR
	NPT21011S	Nuevo y original
	NPT2103S-73_A0ED	Nuevo y original
	NPT2104S1B(REEL)	Nuevo y original
	NPT25015	Nuevo y original
	NPT250LGBRS	Nuevo y original
	NPT25100	Nuevo y original
	NPT25100B	RF JFET Transistors 2.1-2.7GHz 125W Gain 16.5dB GaN
MACOM	NPT2010	RF POWER TRANSISTOR
	NPT2019	RF POWER TRANSISTOR
	NPT2021-SMBPPR	EVAL BOARD FOR NPT2021
	NPT2022-SMBPPR	EVAL BOARD FOR NPT2022
	NPT25015D	RF POWER TRANSISTOR
	NPT2022	RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT
	NPT2021	RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT

NPT2