 |  |  | |
| PartNumber | NPT1012B | NPT1010B | NPT1010 |
| Description | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN | RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN | |
| Manufacturer | MACOM | MACOM | - |
| Product Category | RF JFET Transistors | RF JFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN Si | GaN Si | - |
| Gain | 13 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Vgs Gate Source Breakdown Voltage | 3 V | - | - |
| Id Continuous Drain Current | 4 mA | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Pd Power Dissipation | 44 W | - | - |
| Mounting Style | Screw Mount | - | - |
| Packaging | Tray | Tray | - |
| Configuration | Single | - | - |
| Operating Frequency | 4 GHz | - | - |
| Brand | MACOM | MACOM | - |
| P1dB Compression Point | 43 dBm | - | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Rds On Drain Source Resistance | 440 mOhms | - | - |
| Factory Pack Quantity | 30 | 25 | - |
| Subcategory | Transistors | Transistors | - |
| Vgs th Gate Source Threshold Voltage | - 1.8 V | - | - |
| Unit Weight | 0.007760 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
MACOM |
NPT1012B | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN | |
| NPT1010B | RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN | ||
| NPT1010 | Nuevo y original | ||
| NPT1015 | Nuevo y original | ||
| NPT1015B | GaN Wideband Transisto | ||
MACOM |
NPT1012B | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN | |
| NPT1010B | RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN |