PartNumber | NE3210S01 | NE3210S01-T1B |
Description | RF JFET Transistors Super Lo Noise HJFET | RF JFET Transistors Super Lo Noise HJFET |
Manufacturer | CEL | CEL |
Product Category | RF JFET Transistors | RF JFET Transistors |
RoHS | Y | Y |
Transistor Type | HFET | HFET |
Technology | GaAs | GaAs |
Gain | 13.5 dB | 13.5 dB |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 4 V | 4 V |
Vgs Gate Source Breakdown Voltage | - 3 V | - 3 V |
Id Continuous Drain Current | 70 mA | 70 mA |
Maximum Operating Temperature | + 125 C | + 125 C |
Pd Power Dissipation | 165 mW | 165 mW |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SO-1 | SO-1 |
Packaging | Bulk | Reel |
Operating Frequency | 12 GHz | 12 GHz |
Product | RF JFET | RF JFET |
Type | GaAs HFET | GaAs HFET |
Brand | CEL | CEL |
Forward Transconductance Min | 55 mS | 55 mS |
Gate Source Cutoff Voltage | 2 V | - |
NF Noise Figure | 0.35 dB | 0.35 dB |
Product Type | RF JFET Transistors | RF JFET Transistors |
Factory Pack Quantity | 1 | 4000 |
Subcategory | Transistors | Transistors |